?2000 fairchild semiconductor international rev. a, february 2000 ksc5338d/ksc5338dw 1 d2-pak to-220 npn triple diffused planar silicon transistor absolute maximum ratings t c =25 c unless otherwise noted * pulse test : pulse width = 5ms, duty cycle 10% thermal characteristics t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 1000 v v ceo collector-emitter voltage 450 v v ebo emitter-base voltage 12 v i c collector current (dc) 5 a i cp *collector current (pulse) 10 a i b base current (dc) 2 a i bp *base current (pulse) 4 a p c power dissipation(t c =25 c) 75 w t j junction temperature 150 c t stg storage temperature - 55 ~ 150 c symbol characteristics rating unit r jc thermal resistance junction to case 1.65 c/w r ja junction to ambient 62.5 t l maximun lead temperature for soldering 270 c ksc5338d/ksc5338dw high voltage power switch switching application wide safe operating area built-in free-wheeling diode suitable for electronic ballast application small variance in storage time two package choices : to-220 or d2-pak 1.base 2.collector 3.emitter 1 c b e equivalent circuit
?2000 fairchild semiconductor international rev. a, february 2000 ksc5338d/ksc5338dw electrical characteristics t c =25 c unless otherwise noted symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 1000 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 450 v bv ebo emitter-base breakdown voltage i e =1ma, i c =0 12 v i cbo collector cut-off current v cb =800v, i e =0 10 a i ces collector cut-off current v ces =1000v, i eb =0 t c =25 c 100 a t c =125 c 500 a i ceo collector cut-off current v ce =450v, i b =0 t c =25 c 100 a t c =125 c 500 a i ebo emitter cut-off current v eb =10v, i c =0 10 a h fe dc current gain v ce =1v, i c =0.8a t c =25 c1525 t c =125 c10 14 v ce =1v, i c =2a t c =25 c6 9 t c =125 c4 6 v ce =2.5v, i c =1a t c =25 c1825 t c =125 c14 18 v ce (sat) collector-emitter saturation voltage i c =0.8a, i b =0.08a t c =25 c 0.35 0.5 v t c =125 c0.550.75v i c =2a, i b =0.4a t c =25 c0.470.75v t c =125 c0.91.1v i c =0.8a, i b =0.04a t c =25 c0.91.5v t c =125 c1.82.5v i c =1a, i b =0.2a t c =25 c 0.22 0.5 v t c =125 c0.30.6v v be (sat) base-emitter saturation voltage i cs =0.8a, i b =0.08a t c =25 c0.81.0v t c =125 c 0.65 0.9 v i c =2a, i b =0.4a t c =25 c0.91.0v t c =125 c0.80.9v c ib input capacitance v eb =10v, i c =0.5a, f=1mhz 550 750 pf c ob output capacitance v cb =10v, i e =0, f=1mhz 60 100 pf f t current gain bandwidth product i c =0.5a,v ce =10v 11 mhz v f diode forward voltage i f =1a, i c =1ma, i e =0 t c =25 c 0.86 1.3 v t c =125 c0.79 v i f =2a t c =25 c 0.95 1.5 v t c =125 c0.88 v t fr diode froward recvery time (di/dt=10a/ s) i f =0.4a i f =1a i f =2a 460 360 325 ns ns ns v ce(dsat) dynamic saturation voltage i c =1a, i b1 =100ma v cc =300v at 1 s t c =25 c8 v t c =125 c15 v i c =1a, i b1 =100ma v cc =300v at 3 s t c =25 c2.9 v t c =125 c8 v i c =2a, i b1 =400ma v cc =300v at 1 s t c =25 c9 v t c =125 c17 v i c =2a, i b1 =400ma v cc =300v at 3 s t c =25 c1.9 v t c =125 c8.5 v
?2000 fairchild semiconductor international rev. a, february 2000 ksc5338d/ksc5338dw electrical characteristics t c =25 c unless otherwise noted symbol parameter test condition min typ. max. units resistive load switching (d.c < 10%, pulse width=40 s) t on turn on time i c =2.5a, i b1 =500ma i b2 =1a, v cc =250v, r l = 100 ? 500 750 ns t stg storage time 1.2 1.5 s t f fall time 100 200 ns t on turn on time i c =2a, i b1 =400ma i b2 =1a, v cc =300v r l = 150 ? t c =25 c 100 150 ns t c =125 c 150 ns t stg storage time t c =25 c1.42.2 s t c =125 c1.7 s t f fall time t c =25 c 90 150 ns t c =125 c 150 ns t on turn on time i c =2.5a, i b1 =500ma i b2 =5ma, v cc =300v r l = 120 ? t c =25 c 120 150 ns t c =125 c 150 ns t stg storage time t c =25 c1.8 2.1 s t c =125 c2.6 s t f fall time t c =25 c 110 150 ns t c =125 c 160 ns inductive load switching (v cc =15v) t stg storage time i c =2.5a, i b1 =500ma i b2 =0.5a, v z =350v l c =300 h t c =25 c1.92.2 s t c =125 c2.4 s t f fall time t c =25 c 160 200 ns t c =125 c 330 ns t c cross-over time t c =25 c 350 500 ns t c =125 c 750 ns t stg storage time i c =2a, i b1 =400ma i b2 =0.4a, v z =300v l c =200 h t c =25 c 1.95 2.25 s t c =125 c2.9 s t f fall time t c =25 c 120 150 ns t c =125 c 270 ns t c cross-over time t c =25 c 300 450 ns t c =125 c 700 ns t stg storage time i c =1a, i b1 =100ma i b2 =0.5a, v z =300v l c =200 h t c =25 c0.60.8 s t c =125 c1.0 s t f fall time t c =25 c70ns t c =125 c110 ns t c cross-over time t c =25 c 80 130 ns t c =125 c 170 ns
?2000 fairchild semiconductor international ksc5338d/ksc5338dw rev. a, february 2000 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. dc current gain figure 4. collector-emitter saturation voltage figure 5. collector-emitter saturation voltage figure 6. base-emitter saturation voltage 0246810 0 1 2 3 4 5 0.9a 0.8a 0.7a 0.6a 0.5a 0.4a 0.3a 0.2a i b = 0 i b = 1a i b = 0.1a i c [a], collector current v ce [v], collector-emitter voltage 0.01 0.1 1 10 1 10 100 tj = +25 o c tj = 125 o c v ce = 1v tj = -25 o c hfe, dc current gain i c [a], collector current 0.01 0.1 1 10 1 10 100 tj = +25 o c tj = 125 o c v ce = 5v tj = -25 o c hfe, dc current gain i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 tj = +25 o c tj = 125 o c i c = 5i b tj = -25 o c v ce (sat)[v], collector-emitter voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 tj = +25 o c tj = 125 o c i c = 10i b tj = -25 o c v ce (sat)[v], collector-emitter voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.1 1 10 tj = +25 o c tj = 125 o c i c = 5i b tj = -25 o c v be (sat)[v], base-emitter voltage i c [a], collector current
?2000 fairchild semiconductor international ksc5338d/ksc5338dw rev. a, february 2000 typical characteristics (continued) figure 7. base-emitter saturation voltage figure 8. collector output capacitance figure 9. forward recovery time figure 10. switching time figure 11. induction storage time figure 12. inductive crossover time 1e-3 0.01 0.1 1 10 0.1 1 10 tj = +25 o c tj = 125 o c i c = 10i b tj = -25 o c v be (sat)[v], base-emitter voltage i c [a], collector current 1 10 100 10 100 1000 2000 c ib c ob f = 1mhz c ob , c ib [pf], capacitance reverse voltage [v] 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 250 300 350 400 450 500 di/dt = 10a/ s t c = 25 o c t fr ,[ns], forward recovery time i f [a], forward current 110 0.01 0.1 1 10 0.2 t stg t f v cc = 250v i c = 5i b1 = 2.5i b2 t stg , t f [ns], switching time i c [a], collector current 0 5 10 15 20 2 3 4 5 i bon = i boff v cc = 15v v z = 300v l c = 200 h i c = 2a @ tj=125 o c i c = 2a @ tj=25 o c i c = 1a @ tj=125 o c i c = 1a @ tj=25 o c t stg [ s], storage time h fe , forced gain 2 4 6 8 10 12 14 16 18 20 0 500 1000 1500 2000 i bon = i boff v cc = 15v v z = 300v l c = 200 h i c = 2a @ tj=125 o c i c = 2a @ tj=25 o c i c = 1a @ tj=125 o c i c = 1a @ tj=25 o c t c [ns], crossover time h fe , forced gain
?2000 fairchild semiconductor international ksc5338d/ksc5338dw rev. a, february 2000 typical characteristics (continued) figure 13. inductive fall time figure 14. safe operating area figure 15. reverse bias safe operating figure 16. power derating 2 4 6 8 10 12 14 16 18 20 0 200 400 600 800 1000 i bon = i boff v cc = 15v v z = 300v l c = 200 h i c = 2a @ tj=125 o c i c = 2a @ tj=25 o c i c = 1a @ tj=125 o c i c = 1a @ tj=25 o c t f [ns], fall time h fe , forced gain 10 100 1000 0.01 0.1 1 10 100 dc 5ms 1ms 1 s 10 s i c [a], collector current v ce [v], collector-emitter voltage 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 6 -5v -1.5v t c = 25 o c l c = 2mh 0v i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 25 50 75 100 p c [w], power dissipation t c [ o c], case temperature
4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 package demensions ?2000 fairchild semiconductor international rev. a, february 2000 ksc5338d/ksc5338dw dimensions in millimeters
?2000 fairchild semiconductor international rev. e trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? bottomless? coolfet? crossvolt? e 2 cmos? fact? fact quiet series? fast ? fastr? gto? hisec? isoplanar? microwire? pop? powertrench ? qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? vcx? disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
product folder - fairchild p/n ksc5338d - npn triple diffused planar silicon transistor fairchild semiconductor space space space search | parametric | cross reference space product folders and datasheets application notes space space space find products home >> find products >> space space space space products groups space analog and mixed signal discrete interface logic microcontrollers non-volatile memory optoelectronics markets and applications new products product selection and parametric search cross-reference search technical information buy products technical support my fairchild company ksc5338d npn triple diffused planar silicon transistor related links request samples dotted line how to order products dotted line product change notices (pcns) dotted line support dotted line distributor and field sales representatives dotted line quality and reliability dotted line design tools contents features | product status/pricing/packaging features l wide safe operating area l built-in free-wheeling diode l suitable for electronic ballast application l small variance in storage time l two package choices: to-220 or d 2 - pak back to top space datasheet download this datasheet pdf e-mail this datasheet [e- mail] this page print version product status/pricing/packaging product product status pricing* package type leads packing method ksc5338d full production $0.61 to-220 3 bulk KSC5338DTU full production $0.61 to-220 3 rail * 1,000 piece budgetary pricing back to top space space home | find products | technical information | buy products | support | company | contact us | site index | privacy policy ? copyright 2002 fairchild semiconductor space space file:///e|/new/html/ksc5338d.html [7/27/02 12:13:35 pm]
|
